Phase-field simulation of domain structure evolution in ferroelectric thin films

Y. L. Li, S. Y. Hu, Zi-kui Liu, Long-qing Chen

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


A phase-field model for predicting the domain structure evolution in constrained ferroelectric thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. In particular, the model is applied to the domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition. The effect of substrate constraint on the volume fractions of domain variants, domain-wall orientations, and domain shapes is studied. It is shown that the predicted results agree very well with existing experimental observations in ferroelectric thin films.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 1 2001
EventInfuences of Interface and Dislocation Behavior on Microstructure Evolution - Boston, MA, United States
Duration: Nov 27 2000Nov 30 2000

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Phase-field simulation of domain structure evolution in ferroelectric thin films'. Together they form a unique fingerprint.

Cite this