Phase-field simulation of electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric layered heterostructures

Jia Mian Hu; G. Sheng; J. X. Zhang; C. W. Nan; L. Q. Chen

doi:10.1063/1.3600203

Phase-field simulation of electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric layered heterostructures

Jia Mian Hu
, G. Sheng
, J. X. Zhang
, C. W. Nan
, L. Q. Chen

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric (FE) layered heterostructures was studied using phase-field simulations. In particular, we chose the CoFe₂O ₄ (CFO) magnetic film and the Pb(Zn_1/3Nb _2/3)O₃-PbTiO₃ (PZN-PT) FE layer as a representative example due to their strong respective magnetoelastic and piezoelectric couplings. In-plane 90 magnetic domain switching in the CFO film was observed when a transverse electric field was applied to the PZN-PT layer. The detailed switching behaviors as well as the corresponding magnetic domain structures are presented for CFO films with different geometric sizes and initial magnetization configurations. The effect of a dynamic electric field on the switching process, i.e., a time-dependent electric-field-induced magnetic domain switching, is also discussed.

Original language	English (US)
Article number	123917
Journal	Journal of Applied Physics
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.3600203
State	Published - Jun 15 2011

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3600203

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@article{1464e4bafaa041e2a365bea8141b2572,

title = "Phase-field simulation of electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric layered heterostructures",

abstract = "The electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric (FE) layered heterostructures was studied using phase-field simulations. In particular, we chose the CoFe2O 4 (CFO) magnetic film and the Pb(Zn1/3Nb 2/3)O3-PbTiO3 (PZN-PT) FE layer as a representative example due to their strong respective magnetoelastic and piezoelectric couplings. In-plane 90 magnetic domain switching in the CFO film was observed when a transverse electric field was applied to the PZN-PT layer. The detailed switching behaviors as well as the corresponding magnetic domain structures are presented for CFO films with different geometric sizes and initial magnetization configurations. The effect of a dynamic electric field on the switching process, i.e., a time-dependent electric-field-induced magnetic domain switching, is also discussed.",

author = "Hu, \{Jia Mian\} and G. Sheng and Zhang, \{J. X.\} and Nan, \{C. W.\} and Chen, \{L. Q.\}",

note = "Funding Information: This work was supported by the National Science Foundation (NSF) under grant number DMR-1006541. The computer simulations were carried out on the LION and Cyberstar clusters at the Pennsylvania State University supported in part by NSF Major Research Instrumentation Program through grant OCI-0821527 and in part by the Materials Simulation Center and the Graduated Education and Research Services at the Pennsylvania State University. This work was also financially supported by the NSF of China (Grant Nos. 50832003 and 50921061), the National Basic Research Program of China (Grant No. 2009CB623303), and in part by the China Scholarship Council.",

year = "2011",

month = jun,

day = "15",

doi = "10.1063/1.3600203",

language = "English (US)",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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AU - Hu, Jia Mian

AU - Sheng, G.

AU - Zhang, J. X.

AU - Nan, C. W.

AU - Chen, L. Q.

N1 - Funding Information: This work was supported by the National Science Foundation (NSF) under grant number DMR-1006541. The computer simulations were carried out on the LION and Cyberstar clusters at the Pennsylvania State University supported in part by NSF Major Research Instrumentation Program through grant OCI-0821527 and in part by the Materials Simulation Center and the Graduated Education and Research Services at the Pennsylvania State University. This work was also financially supported by the NSF of China (Grant Nos. 50832003 and 50921061), the National Basic Research Program of China (Grant No. 2009CB623303), and in part by the China Scholarship Council.

PY - 2011/6/15

Y1 - 2011/6/15

N2 - The electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric (FE) layered heterostructures was studied using phase-field simulations. In particular, we chose the CoFe2O 4 (CFO) magnetic film and the Pb(Zn1/3Nb 2/3)O3-PbTiO3 (PZN-PT) FE layer as a representative example due to their strong respective magnetoelastic and piezoelectric couplings. In-plane 90 magnetic domain switching in the CFO film was observed when a transverse electric field was applied to the PZN-PT layer. The detailed switching behaviors as well as the corresponding magnetic domain structures are presented for CFO films with different geometric sizes and initial magnetization configurations. The effect of a dynamic electric field on the switching process, i.e., a time-dependent electric-field-induced magnetic domain switching, is also discussed.

AB - The electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric (FE) layered heterostructures was studied using phase-field simulations. In particular, we chose the CoFe2O 4 (CFO) magnetic film and the Pb(Zn1/3Nb 2/3)O3-PbTiO3 (PZN-PT) FE layer as a representative example due to their strong respective magnetoelastic and piezoelectric couplings. In-plane 90 magnetic domain switching in the CFO film was observed when a transverse electric field was applied to the PZN-PT layer. The detailed switching behaviors as well as the corresponding magnetic domain structures are presented for CFO films with different geometric sizes and initial magnetization configurations. The effect of a dynamic electric field on the switching process, i.e., a time-dependent electric-field-induced magnetic domain switching, is also discussed.

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Phase-field simulation of electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric layered heterostructures

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