Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride

H. S. Venugopalan; S. E. Mohney; B. P. Luther; J. M. Delucca; S. D. Wolter; J. M. Redwing; G. E. Bulman

doi:10.1557/proc-468-431

Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride

H. S. Venugopalan, S. E. Mohney, B. P. Luther, J. M. Delucca, S. D. Wolter, J. M. Redwing, G. E. Bulman

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900°C in N₂, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

Original language	English (US)
Pages (from-to)	431-436
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	468
DOIs	https://doi.org/10.1557/proc-468-431
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Mar 31 1997 → Apr 3 1997

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2d200308359b4881afbf28295a8006da,

title = "Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride",

abstract = "Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900°C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.",

author = "Venugopalan, {H. S.} and Mohney, {S. E.} and Luther, {B. P.} and Delucca, {J. M.} and Wolter, {S. D.} and Redwing, {J. M.} and Bulman, {G. E.}",

year = "1997",

doi = "10.1557/proc-468-431",

language = "English (US)",

volume = "468",

pages = "431--436",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 31-03-1997 Through 03-04-1997",

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TY - JOUR

T1 - Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride

AU - Venugopalan, H. S.

AU - Mohney, S. E.

AU - Luther, B. P.

AU - Delucca, J. M.

AU - Wolter, S. D.

AU - Redwing, J. M.

AU - Bulman, G. E.

PY - 1997

Y1 - 1997

N2 - Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900°C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

AB - Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900°C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

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DO - 10.1557/proc-468-431

M3 - Conference article

AN - SCOPUS:0030707034

SN - 0272-9172

VL - 468

SP - 431

EP - 436

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 31 March 1997 through 3 April 1997

ER -

Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride

Abstract

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