Abstract
Phase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated. We found that the relative stability of the metal silicates with respect to their binary oxides plays a critical role in silicide formation. It was observed that both the HfO2/Si and ZrO2/Si interfaces are stable in a wide temperature range and silicide may form at low temperatures, partially at the HfO2/Si interface.
Original language | English (US) |
---|---|
Pages (from-to) | 201-204 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 57 |
Issue number | 3 |
DOIs | |
State | Published - Aug 2007 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys