Phase stability of hafnium oxide and zirconium oxide on silicon substrate

Dongwon Shin, Zi Kui Liu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Phase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated. We found that the relative stability of the metal silicates with respect to their binary oxides plays a critical role in silicide formation. It was observed that both the HfO2/Si and ZrO2/Si interfaces are stable in a wide temperature range and silicide may form at low temperatures, partially at the HfO2/Si interface.

Original languageEnglish (US)
Pages (from-to)201-204
Number of pages4
JournalScripta Materialia
Issue number3
StatePublished - Aug 2007

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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