Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current

J. Frougier; N. Shukla; D. Deng; M. Jerry; A. Aziz; L. Liu; G. Lavallee; T. S. Mayer; S. Gupta; S. Datta

doi:10.1109/VLSIT.2016.7573445

Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current

J. Frougier, N. Shukla, D. Deng, M. Jerry, A. Aziz, L. Liu, G. Lavallee, T. S. Mayer, S. Gupta, S. Datta

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

37 Scopus citations

Abstract

Vanadium dioxide (VO₂), which exhibits electrically induced abrupt insulator-To-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36% increase in ON current (I_ON) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>10⁵) beyond VO₂ and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in I_ON, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO₂ threshold switches.

Original language	English (US)
Title of host publication	2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006373
DOIs	https://doi.org/10.1109/VLSIT.2016.7573445
State	Published - Sep 21 2016
Event	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States Duration: Jun 13 2016 → Jun 16 2016

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2016-September
ISSN (Print)	0743-1562

Other

Other	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
Country/Territory	United States
City	Honolulu
Period	6/13/16 → 6/16/16

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2016.7573445

Cite this

Frougier, J., Shukla, N., Deng, D., Jerry, M., Aziz, A., Liu, L., Lavallee, G., Mayer, T. S., Gupta, S., & Datta, S. (2016). Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 Article 7573445 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573445

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title = "Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current",

abstract = "Vanadium dioxide (VO2), which exhibits electrically induced abrupt insulator-To-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36% increase in ON current (ION) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>105) beyond VO2 and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in ION, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO2 threshold switches.",

author = "J. Frougier and N. Shukla and D. Deng and M. Jerry and A. Aziz and L. Liu and G. Lavallee and Mayer, {T. S.} and S. Gupta and S. Datta",

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Frougier, J, Shukla, N, Deng, D, Jerry, M, Aziz, A, Liu, L, Lavallee, G, Mayer, TS, Gupta, S & Datta, S 2016, Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016., 7573445, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 6/13/16. https://doi.org/10.1109/VLSIT.2016.7573445

Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. / Frougier, J.; Shukla, N.; Deng, D. et al.
2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7573445 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Deng, D.

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AU - Aziz, A.

AU - Liu, L.

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AU - Datta, S.

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N2 - Vanadium dioxide (VO2), which exhibits electrically induced abrupt insulator-To-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36% increase in ON current (ION) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>105) beyond VO2 and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in ION, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO2 threshold switches.

AB - Vanadium dioxide (VO2), which exhibits electrically induced abrupt insulator-To-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36% increase in ON current (ION) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>105) beyond VO2 and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in ION, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO2 threshold switches.

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Frougier J, Shukla N, Deng D, Jerry M, Aziz A, Liu L et al. Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7573445. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2016.7573445

Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current

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