Abstract
Phase transitions in antiferroelectric lead zirconate thin films were studied at room temperature and at 77 K. The lead zirconate films were prepared on Pt coated Si substrates by a reactive magnetron co-sputtering method followed by a rapid thermal annealing process at 700°C. An electric field induced antiferroelectric - ferroelectric phase transition was observed at room temperature with a maximum polarization value of 70 μC/cm2. The average field required to induce the ferroelectric state and that for the reversion to the antiferroelectric state were 294 kV/cm and 179 kV/cm respectively. At 77 K a metastable ferroelectric - ferroelectric transition was observed with a maximum polarization of 58 μC/cm2. These transitions were found to be coincident with those of lead zirconate single crystals.
Original language | English (US) |
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Pages (from-to) | 149-155 |
Number of pages | 7 |
Journal | Ferroelectrics, Letters Section |
Volume | 20 |
Issue number | 5-6 |
DOIs | |
State | Published - Jan 1 1996 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics