Abstract
The ultraviolet-induced photooxidation of polyalkylsilyne network polymers has been examined. Infrared and x-ray photoelectron spectroscopies indicate a higher oxygen coordination about the Si atoms following photolysis than observed for the linear polysilanes. A photochemical pathway leading to cleavage of the alkyl groups from the Si backbone has been observed, the products of which then desorb as the respective alkanes or 1-alkenes via a thermally activated process. Finally, the photooxidation rate at 193 nm of thin polyalkylsilyne films is photon limited at fluences less than 1–5 mj/cm2 per pulse; whereas above this fluenee, the photooxidation is oxygen limited. For the latter, the amount of oxygen chemically incorporated into the Si-Si network per laser pulse is dictated by the solubility level of oxidant in the film.
Original language | English (US) |
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Pages (from-to) | 1447-1451 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 9 |
Issue number | 3 |
DOIs | |
State | Published - May 1991 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films