Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2

Baoming Wang; Christopher Muratore; Andrey A. Voevodin; Md Amanul Haque

doi:10.1186/s40580-014-0022-6

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS₂

Baoming Wang, Christopher Muratore, Andrey A. Voevodin, Md Amanul Haque

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS₂ films. Photo-voltaic effect was observed in single layer MoS₂ without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS₂ photo device with performance comparable to their exfoliated counterparts.

Original language	English (US)
Article number	22
Journal	Nano Convergence
Volume	1
Issue number	1
DOIs	https://doi.org/10.1186/s40580-014-0022-6
State	Published - Dec 2014

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1186/s40580-014-0022-6

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title = "Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2",

abstract = "We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS2 photo device with performance comparable to their exfoliated counterparts.",

author = "Baoming Wang and Christopher Muratore and Voevodin, {Andrey A.} and Haque, {Md Amanul}",

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N2 - We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS2 photo device with performance comparable to their exfoliated counterparts.

AB - We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS2 photo device with performance comparable to their exfoliated counterparts.

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Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS₂

Abstract

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