J. M. Woodall, P. Oelhafen, T. N. Jackson, J. L. Freeouf, G. D. Pettit

Research output: Contribution to journalConference articlepeer-review

41 Scopus citations


A wet chemical technique is described for passivating air-exposed GaAs surfaces. The passivating layer is elemental arsenic which forms as a result of illuminating an n-type GaAs wafer immersed in a mixture of HCl acid and deionized 18 M OMEGA water with light from a mercury vapor lamp at intensities of 0. 01-0. 05 W-cm** minus **2. Studies using XPS, LEED, and UPS show that the passivated surfaces have the following properties: (1) there is little or no Ga or Ga and As oxide species in the As film or at the film/GaAs interface; (2) a strong GaAs LEED pattern is observed after a 290 degree C anneal following low energy ion beam bombardment. This suggests that the As/GaAs interface formed by photoetching is free of contaminates and that the GaAs surface is well ordered prior to ion bombardment or heat treatment.

Original languageEnglish (US)
Pages (from-to)795-798
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - 1983
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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