Abstract
A wet chemical technique is described for passivating air-exposed GaAs surfaces. The passivating layer is elemental arsenic which forms as a result of illuminating an n-type GaAs wafer immersed in a mixture of HCl acid and deionized 18 M OMEGA water with light from a mercury vapor lamp at intensities of 0. 01-0. 05 W-cm** minus **2. Studies using XPS, LEED, and UPS show that the passivated surfaces have the following properties: (1) there is little or no Ga or Ga and As oxide species in the As film or at the film/GaAs interface; (2) a strong GaAs LEED pattern is observed after a 290 degree C anneal following low energy ion beam bombardment. This suggests that the As/GaAs interface formed by photoetching is free of contaminates and that the GaAs surface is well ordered prior to ion bombardment or heat treatment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 795-798 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1983 |
| Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering