Abstract
In a preliminary report, the authors described the photoelectrochemical production of fluorine from anhydrous hydrogen fluoride solutions using single-crystal TiO2 electrodes. It was found that fluorine doping substantially enhanced the stability of n-TiO2 photoelectrodes in HF/NaF. They now report a fuller characterization of these effects and a study of the energetics of the semiconductor/fluoride-containing solution interface by ac impedance techniques. This study reveals an extremely low density of midgap surface states, which allows the electrode to develop a large open circuit photovoltage and to evolve fluorine efficiently, and without substantial photoanodic corrosion, from anhydrous hydrogen fluoride solutions. This same low density of surface states, and a shift of the valence band-edge to more negative potentials, gives rise to a complete lack of photoactivity in fluoride-containing acetonitrile solutions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 423-428 |
| Number of pages | 6 |
| Journal | Journal of physical chemistry |
| Volume | 94 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- General Engineering
- Physical and Theoretical Chemistry