Photoinduced paramagnetic centers in amorphous silicon oxynitride

J. T. Yount; G. T. Kraus; P. M. Lenahan; D. T. Krick

doi:10.1063/1.349024

Photoinduced paramagnetic centers in amorphous silicon oxynitride

J. T. Yount, G. T. Kraus, P. M. Lenahan, D. T. Krick

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21 Scopus citations

Abstract

Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.

Original language	English (US)
Pages (from-to)	4969-4972
Number of pages	4
Journal	Journal of Applied Physics
Volume	70
Issue number	9
DOIs	https://doi.org/10.1063/1.349024
State	Published - 1991

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.349024

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@article{1237d957cd92441a9b1491be59e855be,

title = "Photoinduced paramagnetic centers in amorphous silicon oxynitride",

abstract = "Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.",

author = "Yount, {J. T.} and Kraus, {G. T.} and Lenahan, {P. M.} and Krick, {D. T.}",

year = "1991",

doi = "10.1063/1.349024",

language = "English (US)",

volume = "70",

pages = "4969--4972",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Photoinduced paramagnetic centers in amorphous silicon oxynitride

AU - Yount, J. T.

AU - Kraus, G. T.

AU - Lenahan, P. M.

AU - Krick, D. T.

PY - 1991

Y1 - 1991

N2 - Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.

AB - Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.

UR - http://www.scopus.com/inward/record.url?scp=0040254951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040254951&partnerID=8YFLogxK

U2 - 10.1063/1.349024

DO - 10.1063/1.349024

M3 - Article

AN - SCOPUS:0040254951

SN - 0021-8979

VL - 70

SP - 4969

EP - 4972

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Photoinduced paramagnetic centers in amorphous silicon oxynitride

Abstract

All Science Journal Classification (ASJC) codes

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