Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process

Amirabbas Pirouz; Seyedehaida Ebrahimi; Farshid Karbassian; Shamsoddin Mohajerzadeh

doi:10.1109/NMDC.2011.6155380

Photoluminescence from SiO ₂ nanostructures prepared by a sequential RIE process

Amirabbas Pirouz, Seyedehaida Ebrahimi, Farshid Karbassian, Shamsoddin Mohajerzadeh

School of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

SiO ₂ nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO ₂ layer, using mixture of SF ₆, H ₂ and O ₂ gases. Photoluminescence measurements depicts that nano-textured SiO ₂ films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous SiO ₂ nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the SiO ₂ nanostructures has also been studied using field-emission scanning electron microscopy.

Original language	English (US)
Title of host publication	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages	372-375
Number of pages	4
DOIs	https://doi.org/10.1109/NMDC.2011.6155380
State	Published - 2011
Event	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of Duration: Oct 18 2011 → Oct 21 2011

Publication series

Name	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Other

Other	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	10/18/11 → 10/21/11

All Science Journal Classification (ASJC) codes

General Materials Science

Access to Document

10.1109/NMDC.2011.6155380

Cite this

@inproceedings{0afda66749a248ad97227ddd1c156f4d,

title = "Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process",

abstract = "SiO 2 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO 2 layer, using mixture of SF 6, H 2 and O 2 gases. Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous SiO 2 nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the SiO 2 nanostructures has also been studied using field-emission scanning electron microscopy.",

author = "Amirabbas Pirouz and Seyedehaida Ebrahimi and Farshid Karbassian and Shamsoddin Mohajerzadeh",

year = "2011",

doi = "10.1109/NMDC.2011.6155380",

language = "English (US)",

isbn = "9781457721397",

series = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

pages = "372--375",

booktitle = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

note = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 ; Conference date: 18-10-2011 Through 21-10-2011",

}

Pirouz, A, Ebrahimi, S, Karbassian, F & Mohajerzadeh, S 2011, Photoluminescence from SiO ₂ nanostructures prepared by a sequential RIE process. in 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011., 6155380, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, pp. 372-375, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, Jeju, Korea, Republic of, 10/18/11. https://doi.org/10.1109/NMDC.2011.6155380

Photoluminescence from SiO ₂ nanostructures prepared by a sequential RIE process. / Pirouz, Amirabbas; Ebrahimi, Seyedehaida; Karbassian, Farshid et al.
2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 372-375 6155380 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - SiO 2 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO 2 layer, using mixture of SF 6, H 2 and O 2 gases. Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous SiO 2 nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the SiO 2 nanostructures has also been studied using field-emission scanning electron microscopy.

AB - SiO 2 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO 2 layer, using mixture of SF 6, H 2 and O 2 gases. Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous SiO 2 nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the SiO 2 nanostructures has also been studied using field-emission scanning electron microscopy.

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