Photoresists for 193-nm lithography

Photolithography using 193-nm light appears to be a viable method to extend IC patterning into the next century. In this review, we discuss the current status of resist technology for 193-nm lithography, including single-layer resists (SLR), top-surface imaging (TSI), and multilayer resist (MLR) systems. We will emphasize the design approaches under investigation, the comparison with deep-UV (248 nm) resist design and materials, and speculate on future lithography processes employing 193-nm lithography and resist technology areas of significant opportunity.