Physical vapor deposition of zinc phthalocyanine nanostructures on oxidized silicon and graphene substrates

Conventional evaporation techniques for zinc phthalocyanine (ZnPc) processing have been a preferred method for the fabrication of nanostructured films. We present a new growth methodology with independent and precise control of the growth flux and substrate temperature. This provides a consistent and well controlled growth, critical for the growth mechanism studies. ZnPc nanostructures are synthesized on single layer graphene coated silicon substrates, under a wide range of growth conditions, using this new approach. The structural features of ZnPc were investigated using Scanning Electron Microscope (SEM) and compared against previous studies of metal-phthalocyanine interactions with graphitic substrates. The observations over a wide range of evaporation conditions and substrate temperatures illustrate the ability to control film structure.