Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors

Ahmedullah Aziz; Swapnadip Ghosh; Suman Datta; Sumeet Kumar Gupta

doi:10.1109/LED.2016.2558149

Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors

Ahmedullah Aziz, Swapnadip Ghosh, Suman Datta, Sumeet Kumar Gupta

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent Landau-Khalatnikov equation solved self-consistently with the transistor equations. The model also considers depolarization fields due to non-ideal contacts. We experimentally characterize FE films to calibrate our model, based on which we analyze the device and circuit implications of FEFETs. We discuss the dependence of the ON current and gate capacitance of FEFETs on the FE thickness and FE material parameters. A ring oscillator analysis shows delay reduction up to 97% at iso-energy for FEFETs compared with MOSFETs at V_DD <0.4 V. FEFET-based SRAMs show 47%-68% larger read stability and 50%-57% lower access time, albeit with an increase in the write time.

Original language	English (US)
Article number	7458805
Pages (from-to)	805-808
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/LED.2016.2558149
State	Published - Jun 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2016.2558149

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title = "Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors",

abstract = "We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent Landau-Khalatnikov equation solved self-consistently with the transistor equations. The model also considers depolarization fields due to non-ideal contacts. We experimentally characterize FE films to calibrate our model, based on which we analyze the device and circuit implications of FEFETs. We discuss the dependence of the ON current and gate capacitance of FEFETs on the FE thickness and FE material parameters. A ring oscillator analysis shows delay reduction up to 97% at iso-energy for FEFETs compared with MOSFETs at VDD <0.4 V. FEFET-based SRAMs show 47%-68% larger read stability and 50%-57% lower access time, albeit with an increase in the write time.",

author = "Ahmedullah Aziz and Swapnadip Ghosh and Suman Datta and Gupta, {Sumeet Kumar}",

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AU - Aziz, Ahmedullah

AU - Ghosh, Swapnadip

AU - Datta, Suman

AU - Gupta, Sumeet Kumar

PY - 2016/6

Y1 - 2016/6

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AB - We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent Landau-Khalatnikov equation solved self-consistently with the transistor equations. The model also considers depolarization fields due to non-ideal contacts. We experimentally characterize FE films to calibrate our model, based on which we analyze the device and circuit implications of FEFETs. We discuss the dependence of the ON current and gate capacitance of FEFETs on the FE thickness and FE material parameters. A ring oscillator analysis shows delay reduction up to 97% at iso-energy for FEFETs compared with MOSFETs at VDD <0.4 V. FEFET-based SRAMs show 47%-68% larger read stability and 50%-57% lower access time, albeit with an increase in the write time.

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Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors

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