TY - JOUR
T1 - Piezoelectric and dielectric properties of Sn-doped (Na0.5K 0.5)NbO3 ceramics processed under low oxygen partial pressure atmosphere
AU - Kobayashi, Keisuke
AU - Doshida, Yutaka
AU - Mizuno, Youichi
AU - Randall, Clive A.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/1
Y1 - 2014/1
N2 - Sn-doped (Na0.5K0.5)NbO3 (Sn-NKN) ceramics fired under various oxygen partial pressure (pO2) conditions have been investigated and discussed in terms of bulk piezoelectric and dielectric properties. X-ray diffraction measurements and Rayleigh analysis indicate that the substitution site of the Sn cations depend on the pO2 atmosphere in the firing process. For pO2 higher than 1.0 ' 10%10 atm, Sn cations mainly substitute as Sn4+ at the B-site of perovskite NKN, whereas Sn2+ A-site substitution is favored under a low-pO2 atmosphere. Low-pO2 fired Sn-NKN ceramics exhibit higher relative permittivity, Curie temperature, and piezoelectric coefficient (d33). Sn 2+ at A-site acts as a donor and reduces the p-type carrier concentrations that result from an electronic compensation of metal vacancies created through the high volatility of Na and K suboxides. The higher piezoelectricity and resistivity in low-pO2 fired Sn-NKN ceramics make this material suitable for base-metal cofired devices such as Ni-innerelectrode multilayer capacitors and actuators.
AB - Sn-doped (Na0.5K0.5)NbO3 (Sn-NKN) ceramics fired under various oxygen partial pressure (pO2) conditions have been investigated and discussed in terms of bulk piezoelectric and dielectric properties. X-ray diffraction measurements and Rayleigh analysis indicate that the substitution site of the Sn cations depend on the pO2 atmosphere in the firing process. For pO2 higher than 1.0 ' 10%10 atm, Sn cations mainly substitute as Sn4+ at the B-site of perovskite NKN, whereas Sn2+ A-site substitution is favored under a low-pO2 atmosphere. Low-pO2 fired Sn-NKN ceramics exhibit higher relative permittivity, Curie temperature, and piezoelectric coefficient (d33). Sn 2+ at A-site acts as a donor and reduces the p-type carrier concentrations that result from an electronic compensation of metal vacancies created through the high volatility of Na and K suboxides. The higher piezoelectricity and resistivity in low-pO2 fired Sn-NKN ceramics make this material suitable for base-metal cofired devices such as Ni-innerelectrode multilayer capacitors and actuators.
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U2 - 10.7567/JJAP.53.011501
DO - 10.7567/JJAP.53.011501
M3 - Article
AN - SCOPUS:84892388153
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1
M1 - 011501
ER -