Piezoelectric RF MEMS switches and phase ShiftersÜ

Ron Polcawich; Daniel Judy; Jeffrey Pulskamp; Susan Trolier-McKinstry; Madan Dubey

doi:10.1109/ISAF.2008.4693746

Piezoelectric RF MEMS switches and phase ShiftersÜ

Ron Polcawich, Daniel Judy, Jeffrey Pulskamp, Susan Trolier-McKinstry, Madan Dubey

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Piezoelectric thin films were utilized to actuate cantilevers for a radio frequency (RF) microelectromechanical system (MEMS) switches. Using lead zirconate titanate (PZT) thin films, an RF MEMS series switch was designed and fabricated.Ü The switch operates from -25^..-C to 100 ^..-C with no change in actuation voltage of 9V.Ü The switch isolation is better than -20 dB and the insertion loss (-S21) less than 0.5 dB from DC to 40 GHz.Ü In addition to improvements in switch performance, a 17 GHz, 2-bit reflection phase shifter has been demonstrated using PZT shunt switches operating at 15 V.Ü Each of the 4 phase states are demonstrated with minimal phase error and an average insertion loss of 6.8 dB with a high of 8 dB for the longest phase state (limited by substrate losses highlighted in our previous work).Ü Correcting the substrate loss reduces the insertion loss of the long phase state to less than 2 dB.

Original language	English (US)
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs	https://doi.org/10.1109/ISAF.2008.4693746
State	Published - 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: Feb 23 2008 → Feb 28 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	3

Other

Other	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/Territory	United States
City	Santa Fe, NM
Period	2/23/08 → 2/28/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2008.4693746

Cite this

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title = "Piezoelectric RF MEMS switches and phase Shifters{\"U}",

abstract = "Piezoelectric thin films were utilized to actuate cantilevers for a radio frequency (RF) microelectromechanical system (MEMS) switches. Using lead zirconate titanate (PZT) thin films, an RF MEMS series switch was designed and fabricated.{\"U} The switch operates from -25..-C to 100 ..-C with no change in actuation voltage of 9V.{\"U} The switch isolation is better than -20 dB and the insertion loss (-S21) less than 0.5 dB from DC to 40 GHz.{\"U} In addition to improvements in switch performance, a 17 GHz, 2-bit reflection phase shifter has been demonstrated using PZT shunt switches operating at 15 V.{\"U} Each of the 4 phase states are demonstrated with minimal phase error and an average insertion loss of 6.8 dB with a high of 8 dB for the longest phase state (limited by substrate losses highlighted in our previous work).{\"U} Correcting the substrate loss reduces the insertion loss of the long phase state to less than 2 dB.",

author = "Ron Polcawich and Daniel Judy and Jeffrey Pulskamp and Susan Trolier-McKinstry and Madan Dubey",

year = "2008",

doi = "10.1109/ISAF.2008.4693746",

language = "English (US)",

isbn = "1424427444",

series = "IEEE International Symposium on Applications of Ferroelectrics",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Polcawich, R, Judy, D, Pulskamp, J, Trolier-McKinstry, S & Dubey, M 2008, Piezoelectric RF MEMS switches and phase ShiftersÜ. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008., 4693746, IEEE International Symposium on Applications of Ferroelectrics, vol. 3, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 2/23/08. https://doi.org/10.1109/ISAF.2008.4693746

Piezoelectric RF MEMS switches and phase ShiftersÜ. / Polcawich, Ron; Judy, Daniel; Pulskamp, Jeffrey et al.
17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. 2008. 4693746 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Dubey, Madan

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N2 - Piezoelectric thin films were utilized to actuate cantilevers for a radio frequency (RF) microelectromechanical system (MEMS) switches. Using lead zirconate titanate (PZT) thin films, an RF MEMS series switch was designed and fabricated.Ü The switch operates from -25..-C to 100 ..-C with no change in actuation voltage of 9V.Ü The switch isolation is better than -20 dB and the insertion loss (-S21) less than 0.5 dB from DC to 40 GHz.Ü In addition to improvements in switch performance, a 17 GHz, 2-bit reflection phase shifter has been demonstrated using PZT shunt switches operating at 15 V.Ü Each of the 4 phase states are demonstrated with minimal phase error and an average insertion loss of 6.8 dB with a high of 8 dB for the longest phase state (limited by substrate losses highlighted in our previous work).Ü Correcting the substrate loss reduces the insertion loss of the long phase state to less than 2 dB.

AB - Piezoelectric thin films were utilized to actuate cantilevers for a radio frequency (RF) microelectromechanical system (MEMS) switches. Using lead zirconate titanate (PZT) thin films, an RF MEMS series switch was designed and fabricated.Ü The switch operates from -25..-C to 100 ..-C with no change in actuation voltage of 9V.Ü The switch isolation is better than -20 dB and the insertion loss (-S21) less than 0.5 dB from DC to 40 GHz.Ü In addition to improvements in switch performance, a 17 GHz, 2-bit reflection phase shifter has been demonstrated using PZT shunt switches operating at 15 V.Ü Each of the 4 phase states are demonstrated with minimal phase error and an average insertion loss of 6.8 dB with a high of 8 dB for the longest phase state (limited by substrate losses highlighted in our previous work).Ü Correcting the substrate loss reduces the insertion loss of the long phase state to less than 2 dB.

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Piezoelectric RF MEMS switches and phase ShiftersÜ

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