Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

Conor Puls; Neal Staley; Ying Liu

doi:10.1109/DRC.2009.5354953

Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

Conor Puls, Neal Staley, Ying Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene - the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off" electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.

Original language	English (US)
Title of host publication	67th Device Research Conference, DRC 2009
Pages	205-206
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354953
State	Published - Dec 11 2009
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: Jun 22 2009 → Jun 24 2009

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	6/22/09 → 6/24/09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2009.5354953

Cite this

@inproceedings{05bd9e73862c4bafb78022410b93cc5b,

title = "Planar tunnel junction fabrication and bandgap engineering on bilayer graphene",

abstract = "High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene - the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to {"}pinch off{"} electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.",

author = "Conor Puls and Neal Staley and Ying Liu",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/DRC.2009.5354953",

language = "English (US)",

isbn = "9781424435289",

series = "Device Research Conference - Conference Digest, DRC",

pages = "205--206",

booktitle = "67th Device Research Conference, DRC 2009",

note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",

}

TY - GEN

T1 - Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

AU - Puls, Conor

AU - Staley, Neal

AU - Liu, Ying

PY - 2009/12/11

Y1 - 2009/12/11

N2 - High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene - the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off" electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.

AB - High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene - the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off" electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.

UR - http://www.scopus.com/inward/record.url?scp=76549104881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76549104881&partnerID=8YFLogxK

U2 - 10.1109/DRC.2009.5354953

DO - 10.1109/DRC.2009.5354953

M3 - Conference contribution

AN - SCOPUS:76549104881

SN - 9781424435289

T3 - Device Research Conference - Conference Digest, DRC

SP - 205

EP - 206

BT - 67th Device Research Conference, DRC 2009

T2 - 67th Device Research Conference, DRC 2009

Y2 - 22 June 2009 through 24 June 2009

ER -

Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this