Plasma-deposited silylation resist for 193 nm lithography

Mark W. Horn; Brian E. Maxwell; Russell B. Goodman; Roderick R. Kunz; Lynn M. Eriksen

doi:10.1116/1.588576

Plasma-deposited silylation resist for 193 nm lithography

Mark W. Horn, Brian E. Maxwell, Russell B. Goodman, Roderick R. Kunz, Lynn M. Eriksen

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Plasma-enhanced chemical-vapor-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction with hydroxyl groups. After oxygen plasfna pattern transfer, features with resolution below 0.25 μm have been obtained.

Original language	English (US)
Pages (from-to)	4207-4211
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	6
DOIs	https://doi.org/10.1116/1.588576
State	Published - 1996

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.588576

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title = "Plasma-deposited silylation resist for 193 nm lithography",

abstract = "Plasma-enhanced chemical-vapor-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction with hydroxyl groups. After oxygen plasfna pattern transfer, features with resolution below 0.25 μm have been obtained.",

author = "Horn, {Mark W.} and Maxwell, {Brian E.} and Goodman, {Russell B.} and Kunz, {Roderick R.} and Eriksen, {Lynn M.}",

year = "1996",

doi = "10.1116/1.588576",

language = "English (US)",

volume = "14",

pages = "4207--4211",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

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T1 - Plasma-deposited silylation resist for 193 nm lithography

AU - Horn, Mark W.

AU - Maxwell, Brian E.

AU - Goodman, Russell B.

AU - Kunz, Roderick R.

AU - Eriksen, Lynn M.

PY - 1996

Y1 - 1996

N2 - Plasma-enhanced chemical-vapor-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction with hydroxyl groups. After oxygen plasfna pattern transfer, features with resolution below 0.25 μm have been obtained.

AB - Plasma-enhanced chemical-vapor-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction with hydroxyl groups. After oxygen plasfna pattern transfer, features with resolution below 0.25 μm have been obtained.

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Plasma-deposited silylation resist for 193 nm lithography

Abstract

All Science Journal Classification (ASJC) codes

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