Plasma-deposited silylation resist for 193 nm lithography

Mark W. Horn; Mordechai Rothschild; Brian E. Maxwell; Russell B. Goodman; Roderick R. Kunz; Lynn M. Eriksen

doi:10.1063/1.116452

Plasma-deposited silylation resist for 193 nm lithography

Mark W. Horn, Mordechai Rothschild, Brian E. Maxwell, Russell B. Goodman, Roderick R. Kunz, Lynn M. Eriksen

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system.

Original language	English (US)
Pages (from-to)	179-181
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	2
DOIs	https://doi.org/10.1063/1.116452
State	Published - 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.116452

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title = "Plasma-deposited silylation resist for 193 nm lithography",

abstract = "Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system.",

author = "Horn, {Mark W.} and Mordechai Rothschild and Maxwell, {Brian E.} and Goodman, {Russell B.} and Kunz, {Roderick R.} and Eriksen, {Lynn M.}",

year = "1996",

doi = "10.1063/1.116452",

language = "English (US)",

volume = "68",

pages = "179--181",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Plasma-deposited silylation resist for 193 nm lithography

AU - Horn, Mark W.

AU - Rothschild, Mordechai

AU - Maxwell, Brian E.

AU - Goodman, Russell B.

AU - Kunz, Roderick R.

AU - Eriksen, Lynn M.

PY - 1996

Y1 - 1996

N2 - Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system.

AB - Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system.

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JF - Applied Physics Letters

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ER -

Plasma-deposited silylation resist for 193 nm lithography

Abstract

All Science Journal Classification (ASJC) codes

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