Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical properties

M. W. Horn

doi:10.1116/1.590691

Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical properties

M. W. Horn

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Microbridge materials optimized for room temperature infrared microbolometers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). Thin films were deposited from tetramethyldisiloxane (TMDS) and oxygen. They have a 4× lower thermal conductivity than that of Si₃N₄ and an inherent absorption coefficient (8-12 μm range) approximately half that of nitride. The PECVD films deposited from TMDS are compatible with current complementary metal-oxide-semiconductor processing and have been shown to have adequate mechanical strength for use as microbolometer membranes.

Original language	English (US)
Pages (from-to)	1045-1049
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	17
Issue number	3
DOIs	https://doi.org/10.1116/1.590691
State	Published - 1999

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.590691

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@article{6b32348f56eb43a3a84ae9329f32a046,

title = "Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical properties",

abstract = "Microbridge materials optimized for room temperature infrared microbolometers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). Thin films were deposited from tetramethyldisiloxane (TMDS) and oxygen. They have a 4× lower thermal conductivity than that of Si3N4 and an inherent absorption coefficient (8-12 μm range) approximately half that of nitride. The PECVD films deposited from TMDS are compatible with current complementary metal-oxide-semiconductor processing and have been shown to have adequate mechanical strength for use as microbolometer membranes.",

author = "Horn, {M. W.}",

year = "1999",

doi = "10.1116/1.590691",

language = "English (US)",

volume = "17",

pages = "1045--1049",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical properties

AU - Horn, M. W.

PY - 1999

Y1 - 1999

N2 - Microbridge materials optimized for room temperature infrared microbolometers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). Thin films were deposited from tetramethyldisiloxane (TMDS) and oxygen. They have a 4× lower thermal conductivity than that of Si3N4 and an inherent absorption coefficient (8-12 μm range) approximately half that of nitride. The PECVD films deposited from TMDS are compatible with current complementary metal-oxide-semiconductor processing and have been shown to have adequate mechanical strength for use as microbolometer membranes.

AB - Microbridge materials optimized for room temperature infrared microbolometers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). Thin films were deposited from tetramethyldisiloxane (TMDS) and oxygen. They have a 4× lower thermal conductivity than that of Si3N4 and an inherent absorption coefficient (8-12 μm range) approximately half that of nitride. The PECVD films deposited from TMDS are compatible with current complementary metal-oxide-semiconductor processing and have been shown to have adequate mechanical strength for use as microbolometer membranes.

UR - http://www.scopus.com/inward/record.url?scp=24644519941&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24644519941&partnerID=8YFLogxK

U2 - 10.1116/1.590691

DO - 10.1116/1.590691

M3 - Article

AN - SCOPUS:24644519941

SN - 1071-1023

VL - 17

SP - 1045

EP - 1049

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical properties

Abstract

All Science Journal Classification (ASJC) codes

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