@inproceedings{a5401de764794eacb460e75716899e22,
title = "Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs",
abstract = "Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result of these treatments, XPS was used to obtain atomic concentrations and bonding information.",
author = "Meyer, {David J.} and Flemish, {Joseph R.} and Redwing, {Joan M.}",
year = "2007",
language = "English (US)",
isbn = "1893580091",
series = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",
pages = "305--307",
booktitle = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",
note = "22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 ; Conference date: 14-05-2007 Through 17-05-2007",
}