TY - JOUR
T1 - Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts
AU - Chu, Rongming
AU - Shen, Likum
AU - Fichtenbaum, Nicholas
AU - Brown, David
AU - Keller, Stacia
AU - Mishra, Umesh K.
N1 - Funding Information:
Manuscript received December 14, 2007. This work was supported in part by the ONR MINE project monitored by Dr. H. Dietrich and Dr. P. Maki. The review of this letter was arranged by Editor G. Meneghesso. The authors are with the Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 USA (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.917814
PY - 2008/4
Y1 - 2008/4
N2 - It has been found that the reverse leakage current of AlGaN/GaN Schottky contacts can be significantly reduced by a CF4 plasma treatment prior to the Schottky metal evaporation. The data of electrical characterization suggest that the leakage reduction is related to the modification of the semiconductor surface by plasma treatment. The leakage reduction effect was also observed in GaN Schottky contacts. Capacitance-voltage characterization of the GaN Schottky contacts indicates that the Schottky barrier height was slightly increased by the plasma treatment. A two-step surface treatment procedure, consisting of a BCl3 plasma treatment followed by a brief CF4 plasma treatment, has been developed as an efficient approach to reduce the reverse leakage of the Schottky contacts, while avoiding side effects related to the CF4 plasma.
AB - It has been found that the reverse leakage current of AlGaN/GaN Schottky contacts can be significantly reduced by a CF4 plasma treatment prior to the Schottky metal evaporation. The data of electrical characterization suggest that the leakage reduction is related to the modification of the semiconductor surface by plasma treatment. The leakage reduction effect was also observed in GaN Schottky contacts. Capacitance-voltage characterization of the GaN Schottky contacts indicates that the Schottky barrier height was slightly increased by the plasma treatment. A two-step surface treatment procedure, consisting of a BCl3 plasma treatment followed by a brief CF4 plasma treatment, has been developed as an efficient approach to reduce the reverse leakage of the Schottky contacts, while avoiding side effects related to the CF4 plasma.
UR - https://www.scopus.com/pages/publications/41749103778
UR - https://www.scopus.com/pages/publications/41749103778#tab=citedBy
U2 - 10.1109/LED.2008.917814
DO - 10.1109/LED.2008.917814
M3 - Article
AN - SCOPUS:41749103778
SN - 0741-3106
VL - 29
SP - 297
EP - 299
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 4
ER -