Plastic deformation and residual stresses in SiC boules grown by PVT

S. Ha, G. S. Rohrer, M. Skowronski, V. D. Heydemann, D. W. Snyder

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations


The thermoelastic stress distribution in growing 6H SiC crystals was simulated using a two dimensional finite element model. Based on the calculated stress distribution, possible plastic deformation of the material was postulated. High resolution x-ray diffraction (HRXRD) was used to detect the net deformation and residual stresses in the grown crystals. The results were in agreement with the postulated plastic deformation.

Original languageEnglish (US)
Pages (from-to)I/-
JournalMaterials Science Forum
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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