Plastic deformation and residual stresses in SiC boules grown by PVT

S. Ha; G. S. Rohrer; M. Skowronski; V. D. Heydemann; D. W. Snyder

Plastic deformation and residual stresses in SiC boules grown by PVT

S. Ha, G. S. Rohrer, M. Skowronski, V. D. Heydemann, D. W. Snyder

Research output: Contribution to journal › Conference article › peer-review

Abstract

The thermoelastic stress distribution in growing 6H SiC crystals was simulated using a two dimensional finite element model. Based on the calculated stress distribution, possible plastic deformation of the material was postulated. High resolution x-ray diffraction (HRXRD) was used to detect the net deformation and residual stresses in the grown crystals. The results were in agreement with the postulated plastic deformation.

Original language	English (US)
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
State	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{028bfc17af1d4f6aadb9986e86e4e19a,

title = "Plastic deformation and residual stresses in SiC boules grown by PVT",

abstract = "The thermoelastic stress distribution in growing 6H SiC crystals was simulated using a two dimensional finite element model. Based on the calculated stress distribution, possible plastic deformation of the material was postulated. High resolution x-ray diffraction (HRXRD) was used to detect the net deformation and residual stresses in the grown crystals. The results were in agreement with the postulated plastic deformation.",

author = "S. Ha and Rohrer, {G. S.} and M. Skowronski and Heydemann, {V. D.} and Snyder, {D. W.}",

year = "2000",

language = "English (US)",

volume = "338",

pages = "I/--",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - Plastic deformation and residual stresses in SiC boules grown by PVT

AU - Ha, S.

AU - Rohrer, G. S.

AU - Skowronski, M.

AU - Heydemann, V. D.

AU - Snyder, D. W.

PY - 2000

Y1 - 2000

N2 - The thermoelastic stress distribution in growing 6H SiC crystals was simulated using a two dimensional finite element model. Based on the calculated stress distribution, possible plastic deformation of the material was postulated. High resolution x-ray diffraction (HRXRD) was used to detect the net deformation and residual stresses in the grown crystals. The results were in agreement with the postulated plastic deformation.

AB - The thermoelastic stress distribution in growing 6H SiC crystals was simulated using a two dimensional finite element model. Based on the calculated stress distribution, possible plastic deformation of the material was postulated. High resolution x-ray diffraction (HRXRD) was used to detect the net deformation and residual stresses in the grown crystals. The results were in agreement with the postulated plastic deformation.

UR - http://www.scopus.com/inward/record.url?scp=0033682844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033682844&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033682844

SN - 0255-5476

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Plastic deformation and residual stresses in SiC boules grown by PVT

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this