@inproceedings{ba2c9afbd52640cfaa5c83161a14b597,
title = "Polarization charge and coercive field dependent performance of negative capacitance FETs",
abstract = "Negative capacitance FETs (NCFETs) [1, 2] have garnered an immense interest due to the possibility of achieving sub-60mV/decade sub-threshold swing at room temperature. NCFETs employ a ferroelectric (FE) material in the gate stack (Fig. 1) and utilize the negative capacitance associated with the FE to generate a voltage step up at the gate terminal, thereby achieving steep switching. In this work, we analyze the dependence of NCFET characteristics and circuit performance on the polarization charge and coercive field of FE-based gate stack through extensive experimental characterization of FE and device-circuit simulations.",
author = "Ahmedullah Aziz and Swapnadip Ghosh and Gupta, {Sumeet K.} and Suman Datta",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 74th Annual Device Research Conference, DRC 2016 ; Conference date: 19-06-2016 Through 22-06-2016",
year = "2016",
month = aug,
day = "22",
doi = "10.1109/DRC.2016.7548416",
language = "English (US)",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "74th Annual Device Research Conference, DRC 2016",
address = "United States",
}