Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon

Fengang Zheng; Mingrong Shen; Liang Fang; Xinglong Wu; Wenwu Cao

doi:10.1016/j.materresbull.2008.09.029

Polarization fatigue and photoinduced current in (Pb_0.72La_0.28)Ti_0.93O₃ buffered Pb(Zr_0.52Ti_0.48)O₃ films on platinized silicon

Fengang Zheng, Mingrong Shen, Liang Fang, Xinglong Wu, Wenwu Cao

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report a study on the fatigue behavior of Pb(Zr_0.52Ti_0.48)TiO₃ (PZT) films deposited on Pt/Ti/SiO₂/Si substrates by a sol-gel method with single- and double-sided (Pb_0.72La_0.28)Ti_0.93O₃ (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternating-current electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties.

Original language	English (US)
Pages (from-to)	803-806
Number of pages	4
Journal	Materials Research Bulletin
Volume	44
Issue number	4
DOIs	https://doi.org/10.1016/j.materresbull.2008.09.029
State	Published - Apr 2 2009

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2008.09.029

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title = "Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon",

abstract = "We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method with single- and double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternating-current electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties.",

author = "Fengang Zheng and Mingrong Shen and Liang Fang and Xinglong Wu and Wenwu Cao",

note = "Funding Information: This work was supported by grant (no. 50702036) from National Natural Science Foundation of China.",

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doi = "10.1016/j.materresbull.2008.09.029",

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T1 - Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon

AU - Zheng, Fengang

AU - Shen, Mingrong

AU - Fang, Liang

AU - Wu, Xinglong

AU - Cao, Wenwu

N1 - Funding Information: This work was supported by grant (no. 50702036) from National Natural Science Foundation of China.

PY - 2009/4/2

Y1 - 2009/4/2

N2 - We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method with single- and double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternating-current electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties.

AB - We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method with single- and double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternating-current electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties.

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U2 - 10.1016/j.materresbull.2008.09.029

DO - 10.1016/j.materresbull.2008.09.029

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SN - 0025-5408

VL - 44

SP - 803

EP - 806

JO - Materials Research Bulletin

JF - Materials Research Bulletin

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Polarization fatigue and photoinduced current in (Pb_0.72La_0.28)Ti_0.93O₃ buffered Pb(Zr_0.52Ti_0.48)O₃ films on platinized silicon

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