Polishing and surface characterization of SiC substrates

V. J. Everson; D. W. Snyder; V. D. Heydemann

Polishing and surface characterization of SiC substrates

V. J. Everson, D. W. Snyder, V. D. Heydemann

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

Original language	English (US)
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
State	Published - Jan 1 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Polishing and surface characterization of SiC substrates",

abstract = "We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.",

author = "Everson, {V. J.} and Snyder, {D. W.} and Heydemann, {V. D.}",

year = "2000",

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journal = "Materials Science Forum",

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TY - JOUR

T1 - Polishing and surface characterization of SiC substrates

AU - Everson, V. J.

AU - Snyder, D. W.

AU - Heydemann, V. D.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

AB - We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

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M3 - Conference article

AN - SCOPUS:17544396432

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Polishing and surface characterization of SiC substrates

Abstract

All Science Journal Classification (ASJC) codes

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