Abstract
We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.
| Original language | English (US) |
|---|---|
| Pages (from-to) | II/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| State | Published - Jan 1 2000 |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering