Polycrystalline diamond growth on β-Ga2O3for thermal management

Mohamadali Malakoutian, Yiwen Song, Chao Yuan, Chenhao Ren, James Spencer Lundh, Robert M. Lavelle, Joseph E. Brown, David W. Snyder, Samuel Graham, Sukwon Choi, Srabanti Chowdhury

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m-1 K-1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G-1 W-1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.

Original languageEnglish (US)
Article numberabf4f1
JournalApplied Physics Express
Issue number5
StatePublished - May 2021

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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