Polycrystalline diamond growth on β-Ga2O3for thermal management

Mohamadali Malakoutian; Yiwen Song; Chao Yuan; Chenhao Ren; James Spencer Lundh; Robert M. Lavelle; Joseph E. Brown; David W. Snyder; Samuel Graham; Sukwon Choi; Srabanti Chowdhury

doi:10.35848/1882-0786/abf4f1

Polycrystalline diamond growth on β-Ga₂O₃for thermal management

Mohamadali Malakoutian, Yiwen Song, Chao Yuan, Chenhao Ren, James Spencer Lundh, Robert M. Lavelle, Joseph E. Brown, David W. Snyder, Samuel Graham, Sukwon Choi, Srabanti Chowdhury

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m-1 K-1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G-1 W-1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.

Original language	English (US)
Article number	abf4f1
Journal	Applied Physics Express
Volume	14
Issue number	5
DOIs	https://doi.org/10.35848/1882-0786/abf4f1
State	Published - May 2021

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.35848/1882-0786/abf4f1

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title = "Polycrystalline diamond growth on β-Ga2O3for thermal management",

abstract = "We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m-1 K-1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G-1 W-1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.",

author = "Mohamadali Malakoutian and Yiwen Song and Chao Yuan and Chenhao Ren and Lundh, {James Spencer} and Lavelle, {Robert M.} and Brown, {Joseph E.} and Snyder, {David W.} and Samuel Graham and Sukwon Choi and Srabanti Chowdhury",

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year = "2021",

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doi = "10.35848/1882-0786/abf4f1",

language = "English (US)",

volume = "14",

journal = "Applied Physics Express",

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T1 - Polycrystalline diamond growth on β-Ga2O3for thermal management

AU - Malakoutian, Mohamadali

AU - Song, Yiwen

AU - Yuan, Chao

AU - Ren, Chenhao

AU - Lundh, James Spencer

AU - Lavelle, Robert M.

AU - Brown, Joseph E.

AU - Snyder, David W.

AU - Graham, Samuel

AU - Choi, Sukwon

AU - Chowdhury, Srabanti

PY - 2021/5

Y1 - 2021/5

N2 - We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m-1 K-1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G-1 W-1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.

AB - We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m-1 K-1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G-1 W-1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.

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Polycrystalline diamond growth on β-Ga₂O₃for thermal management

Abstract

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