We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m-1 K-1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G-1 W-1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)