Polymeric substrate spin-cast diF-TESADT OTFT circuits

Sung Kyu Park; Devin S. Mourey; Sankar Subramanian; John E. Anthony; Thomas N. Jackson

doi:10.1109/LED.2008.2000891

Polymeric substrate spin-cast diF-TESADT OTFT circuits

Sung Kyu Park, Devin S. Mourey, Sankar Subramanian, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report 7- and 15-stage spin-cast contact-crystallized 2, 8-difluoro-5, 11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistor (OTFT) ring oscillators on plastic substrates with a maximum frequency of more than 22 kHz and a propagation delay of less than 3.3 μs/stage at a supply bias of -80 V. The circuits have stable operation for a supply bias as small as -3 V (25-30 μs/stage). Spin-cast diF-TESADT OTFTs from a toluene solution on plastic substrates have a mobility of 0.1-0.2 cm²/V · s with a contact-related microstructure from pentafluorobenzenethiol-treated Au source and drain electrodes.

Original language	English (US)
Pages (from-to)	1004-1006
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	9
DOIs	https://doi.org/10.1109/LED.2008.2000891
State	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2000891

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title = "Polymeric substrate spin-cast diF-TESADT OTFT circuits",

abstract = "We report 7- and 15-stage spin-cast contact-crystallized 2, 8-difluoro-5, 11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistor (OTFT) ring oscillators on plastic substrates with a maximum frequency of more than 22 kHz and a propagation delay of less than 3.3 μs/stage at a supply bias of -80 V. The circuits have stable operation for a supply bias as small as -3 V (25-30 μs/stage). Spin-cast diF-TESADT OTFTs from a toluene solution on plastic substrates have a mobility of 0.1-0.2 cm2/V · s with a contact-related microstructure from pentafluorobenzenethiol-treated Au source and drain electrodes.",

author = "Park, {Sung Kyu} and Mourey, {Devin S.} and Sankar Subramanian and Anthony, {John E.} and Jackson, {Thomas N.}",

note = "Funding Information: Manuscript received April 21, 2008; revised May 19, 2008. This work was supported in part by the National Science Foundation (NSF) through the Pennsylvania State Center for Nanoscale Science, an NSF MRSEC, and in part by the Office of Naval Research. The review of this letter was arranged by Editor J. K. O. Sin.",

year = "2008",

doi = "10.1109/LED.2008.2000891",

language = "English (US)",

volume = "29",

pages = "1004--1006",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Polymeric substrate spin-cast diF-TESADT OTFT circuits

AU - Park, Sung Kyu

AU - Mourey, Devin S.

AU - Subramanian, Sankar

AU - Anthony, John E.

AU - Jackson, Thomas N.

N1 - Funding Information: Manuscript received April 21, 2008; revised May 19, 2008. This work was supported in part by the National Science Foundation (NSF) through the Pennsylvania State Center for Nanoscale Science, an NSF MRSEC, and in part by the Office of Naval Research. The review of this letter was arranged by Editor J. K. O. Sin.

PY - 2008

Y1 - 2008

N2 - We report 7- and 15-stage spin-cast contact-crystallized 2, 8-difluoro-5, 11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistor (OTFT) ring oscillators on plastic substrates with a maximum frequency of more than 22 kHz and a propagation delay of less than 3.3 μs/stage at a supply bias of -80 V. The circuits have stable operation for a supply bias as small as -3 V (25-30 μs/stage). Spin-cast diF-TESADT OTFTs from a toluene solution on plastic substrates have a mobility of 0.1-0.2 cm2/V · s with a contact-related microstructure from pentafluorobenzenethiol-treated Au source and drain electrodes.

AB - We report 7- and 15-stage spin-cast contact-crystallized 2, 8-difluoro-5, 11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistor (OTFT) ring oscillators on plastic substrates with a maximum frequency of more than 22 kHz and a propagation delay of less than 3.3 μs/stage at a supply bias of -80 V. The circuits have stable operation for a supply bias as small as -3 V (25-30 μs/stage). Spin-cast diF-TESADT OTFTs from a toluene solution on plastic substrates have a mobility of 0.1-0.2 cm2/V · s with a contact-related microstructure from pentafluorobenzenethiol-treated Au source and drain electrodes.

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U2 - 10.1109/LED.2008.2000891

DO - 10.1109/LED.2008.2000891

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SN - 0741-3106

VL - 29

SP - 1004

EP - 1006

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Polymeric substrate spin-cast diF-TESADT OTFT circuits

Abstract

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