Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films

Yao O. Jin; Adem Ozcelik; Mark W. Horn; Thomas N. Jackson

doi:10.1116/1.4894268

Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VO_x microbolometer thin films

Yao O. Jin, Adem Ozcelik, Mark W. Horn, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Vanadium oxide (VO_x) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VO_x film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO _x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

Original language	English (US)
Article number	061501
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	32
Issue number	6
DOIs	https://doi.org/10.1116/1.4894268
State	Published - Nov 2014

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films",

abstract = "Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.",

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year = "2014",

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T1 - Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films

AU - Jin, Yao O.

AU - Ozcelik, Adem

AU - Horn, Mark W.

AU - Jackson, Thomas N.

PY - 2014/11

Y1 - 2014/11

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AB - Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

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Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VO_x microbolometer thin films

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