Potential imaging of pentacene organic thin-film transistors

J. A. Nichols; D. J. Gundlach; T. N. Jackson

doi:10.1063/1.1611278

Potential imaging of pentacene organic thin-film transistors

J. A. Nichols, D. J. Gundlach, T. N. Jackson

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150 Scopus citations

Abstract

Potential imaging of pentacene organic thin-film transistors was studied. An atomic force microscopy (AFM) was operated with a conductive tip in noncontact mode in scanning Kelvin probe microscopy (SKPM). The potential measured at the source and drain contacts was approximately constant with small variations related to the surface potential of the pentacene film.

Original language	English (US)
Pages (from-to)	2366-2368
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1611278
State	Published - Sep 22 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1611278

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title = "Potential imaging of pentacene organic thin-film transistors",

abstract = "Potential imaging of pentacene organic thin-film transistors was studied. An atomic force microscopy (AFM) was operated with a conductive tip in noncontact mode in scanning Kelvin probe microscopy (SKPM). The potential measured at the source and drain contacts was approximately constant with small variations related to the surface potential of the pentacene film.",

author = "Nichols, {J. A.} and Gundlach, {D. J.} and Jackson, {T. N.}",

year = "2003",

month = sep,

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doi = "10.1063/1.1611278",

language = "English (US)",

volume = "83",

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journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

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AU - Nichols, J. A.

AU - Gundlach, D. J.

AU - Jackson, T. N.

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N2 - Potential imaging of pentacene organic thin-film transistors was studied. An atomic force microscopy (AFM) was operated with a conductive tip in noncontact mode in scanning Kelvin probe microscopy (SKPM). The potential measured at the source and drain contacts was approximately constant with small variations related to the surface potential of the pentacene film.

AB - Potential imaging of pentacene organic thin-film transistors was studied. An atomic force microscopy (AFM) was operated with a conductive tip in noncontact mode in scanning Kelvin probe microscopy (SKPM). The potential measured at the source and drain contacts was approximately constant with small variations related to the surface potential of the pentacene film.

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DO - 10.1063/1.1611278

M3 - Article

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EP - 2368

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Potential imaging of pentacene organic thin-film transistors

Abstract

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