@article{0563d0f09982441d8028ea0eb3b71ad7,
title = "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz",
abstract = "In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.",
author = "Christiane Poblenz and Corrion, {Andrea L.} and Felix Recht and Suh, {Chang Soo} and Rongming Chu and Likun Shen and Speck, {James S.} and Mishra, {Umesh K.}",
note = "Funding Information: Manuscript received July 6, 2007; revised August 16, 2007. This work was supported in part by the Office of Naval Research through the Millimeter-wave Initiative for Nitride Electronics (MINE) Multidisciplinary University Research Initiative program under Agency Contract N00014-05-1-0419 (Contract Monitor: Dr. P. Maki) and in part by the Defense Advanced Research Projects Agency Microsystems Technology Office through the Wide Bandgap Semiconductors Technology Initiative for RF Applications initiative under Agency Contract 4400126921 (Program Manager: Dr. M. Rosker). The review of this letter was arranged by Editor G. Meneghesso.",
year = "2007",
month = nov,
doi = "10.1109/LED.2007.907266",
language = "English (US)",
volume = "28",
pages = "945--947",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}