Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Man Hoi Wong; Yi Pei; Rongming Chu; Siddharth Rajan; Brian L. Swenson; David F. Brown; Stacia Keller; Steven P. Denbaars; James S. Speck; Umesh K. Mishra

doi:10.1109/DRC.2008.4800802

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L. Swenson, David F. Brown, Stacia Keller, Steven P. Denbaars, James S. Speck, Umesh K. Mishra

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	201-202
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800802
State	Published - 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: Jun 23 2008 → Jun 25 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	6/23/08 → 6/25/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2008.4800802

Cite this

Wong, M. H., Pei, Y., Chu, R., Rajan, S., Swenson, B. L., Brown, D. F., Keller, S., Denbaars, S. P., Speck, J. S., & Mishra, U. K. (2008). Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 201-202). Article 4800802 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800802

@inproceedings{b741655e41384ad98c43afba0a861ca6,

title = "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier",

author = "Wong, {Man Hoi} and Yi Pei and Rongming Chu and Siddharth Rajan and Swenson, {Brian L.} and Brown, {David F.} and Stacia Keller and Denbaars, {Steven P.} and Speck, {James S.} and Mishra, {Umesh K.}",

year = "2008",

doi = "10.1109/DRC.2008.4800802",

language = "English (US)",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "201--202",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

Wong, MH, Pei, Y, Chu, R, Rajan, S, Swenson, BL, Brown, DF, Keller, S, Denbaars, SP, Speck, JS & Mishra, UK 2008, Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. in 66th DRC Device Research Conference Digest, DRC 2008., 4800802, Device Research Conference - Conference Digest, DRC, pp. 201-202, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800802

TY - GEN

T1 - Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

AU - Wong, Man Hoi

AU - Pei, Yi

AU - Chu, Rongming

AU - Rajan, Siddharth

AU - Swenson, Brian L.

AU - Brown, David F.

AU - Keller, Stacia

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2008

Y1 - 2008

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U2 - 10.1109/DRC.2008.4800802

DO - 10.1109/DRC.2008.4800802

M3 - Conference contribution

AN - SCOPUS:64849092834

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 201

EP - 202

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

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All Science Journal Classification (ASJC) codes

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