Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Man Hoi Wong; Yi Pei; Rongming Chu; Siddharth Rajan; Brian L. Swenson; David F. Brown; Stacia Keller; Steven P. Denbaars; James S. Speck; Umesh K. Mishra

doi:10.1109/DRC.2008.4800802

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Man Hoi Wong
, Yi Pei
, Rongming Chu
, Siddharth Rajan
, Brian L. Swenson
, David F. Brown
, Stacia Keller
, Steven P. Denbaars
, James S. Speck
, Umesh K. Mishra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	201-202
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800802
State	Published - 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: Jun 23 2008 → Jun 25 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	6/23/08 → 6/25/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2008.4800802

Cite this

Wong, M. H., Pei, Y., Chu, R., Rajan, S., Swenson, B. L., Brown, D. F., Keller, S., Denbaars, S. P., Speck, J. S., & Mishra, U. K. (2008). Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 201-202). Article 4800802 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800802

@inproceedings{b741655e41384ad98c43afba0a861ca6,

title = "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier",

author = "Wong, \{Man Hoi\} and Yi Pei and Rongming Chu and Siddharth Rajan and Swenson, \{Brian L.\} and Brown, \{David F.\} and Stacia Keller and Denbaars, \{Steven P.\} and Speck, \{James S.\} and Mishra, \{Umesh K.\}",

year = "2008",

doi = "10.1109/DRC.2008.4800802",

language = "English (US)",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "201--202",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

Wong, MH, Pei, Y, Chu, R, Rajan, S, Swenson, BL, Brown, DF, Keller, S, Denbaars, SP, Speck, JS & Mishra, UK 2008, Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. in 66th DRC Device Research Conference Digest, DRC 2008., 4800802, Device Research Conference - Conference Digest, DRC, pp. 201-202, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800802

TY - GEN

T1 - Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

AU - Wong, Man Hoi

AU - Pei, Yi

AU - Chu, Rongming

AU - Rajan, Siddharth

AU - Swenson, Brian L.

AU - Brown, David F.

AU - Keller, Stacia

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2008

Y1 - 2008

UR - https://www.scopus.com/pages/publications/64849092834

UR - https://www.scopus.com/pages/publications/64849092834#tab=citedBy

U2 - 10.1109/DRC.2008.4800802

DO - 10.1109/DRC.2008.4800802

M3 - Conference contribution

AN - SCOPUS:64849092834

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 201

EP - 202

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this