Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Duenkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially in the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where the write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a nonferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state, thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation has been performed on fully depleted silicon-on-insulator (FDSOI) FeFETs integrated on a 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the nonferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.

Original languageEnglish (US)
Pages (from-to)54602-54610
Number of pages9
JournalACS Applied Materials and Interfaces
Volume15
Issue number47
DOIs
StatePublished - 2023

All Science Journal Classification (ASJC) codes

  • General Materials Science

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