@inproceedings{f0b6b82623b8404792a0f0eae75ba14f,
title = "Pre-passivation plasma surface treatment effects on critical device electrical parameters of AlGaN/GaN HEMTs",
abstract = "This work reports on our investigation of fundamental aspects of surface modification and passivation relating to manufacturability of reliable AlGaN/GaN HEMT devices. We have found that successful mitigation of the RF dispersion in these HEMTs is highly dependent on the type of pre-passivation surface treatment. Surface plasma treatments consisting of C2F6, O2, Cl2, or NH3 used in conjunction with PECVD SiNx allow for the best pulsed I-V characteristics. Less dependent on pre-passivation surface treatment are dc I-V parameters such as interdevice isolation current and gate leakage current, whose magnitude can be altered greatly by varying SiNx film deposition conditions.",
author = "Meyer, {David J.} and Flemish, {Joseph R.} and Redwing, {Joan M.}",
year = "2008",
language = "English (US)",
isbn = "1893580113",
series = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
booktitle = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
note = "23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 ; Conference date: 14-04-2008 Through 17-04-2008",
}