Precision placement of heteroepitaxial semiconductor quantum dots

Keyphrases

• Adatoms 50%
• Complex Patterns 50%
• Complex Surface 50%
• Device Architecture 50%
• Focused Ion Beam 50%
• Fortress 50%
• Gas Concentration 50%
• Growth Chamber 50%
• Growth Conditions 50%
• Growth Rate 50%
• Growth Temperature 50%
• Heteroepitaxial Structures 100%
• Heteroepitaxy 50%
• High Dose 50%
• In Situ 50%
• Ion Dose 50%
• Island nucleation 50%
• Local Region 50%
• Misfit Dislocation 50%
• Nanodevices 50%
• Nanometer Resolution 50%
• Positional Accuracy 50%
• Quadruplets 50%
• Self-assembly 50%
• Semiconductor Quantum Dots 100%
• Si(111) 50%
• Strain Relaxation 50%
• Sub-100 Nm 50%
• Surface Mobility 50%
• Surface Topography 100%
• Temperature Rate 50%

Engineering

• Cooperative 50%
• Focused Ion Beam 50%
• Growth Condition 50%
• Growth Temperature 50%
• Local Region 50%
• Misfit Dislocation 50%
• Nanoelectronics 50%
• Nanometre 50%
• Positional Accuracy 50%
• Potential Application 50%
• Semiconductor Quantum Dot 100%
• Shallower 50%
• Strain Relaxation 50%
• Surface Topography 100%

Material Science

• Dislocation (Crystal) 25%
• Focused Ion Beam 25%
• Heteroepitaxy 25%
• Nucleation 100%
• Quantum Dot 100%
• Self Assembly 25%
• Surface Topography 50%