Abstract
In partially depleted NMOS transistors on SOI, back-channel leakage problems are caused by radiation-induced hole trapping at point defect precursors in the buried oxide. Thus, a predictive model of these hole traps would be quite useful. A model was developed for hole trapping in poly-capped thermally grown oxides which effectively predicts trapped hole densities in Unibond and separation by implantation of oxygen (SIMOX) buried oxides. The model is based on statistical thermodynamics and electron spin resonance (ESR) measurements of defects as E′ centers. More recent ESR measurements have demonstrated that E′ centers also cause charge trapping in SIMOX and Unibond buried oxides.
| Original language | English (US) |
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| Pages | 176-177 |
| Number of pages | 2 |
| State | Published - Dec 1 1997 |
| Event | Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: Oct 6 1997 → Oct 9 1997 |
Other
| Other | Proceedings of the 1997 IEEE International SOI Conference |
|---|---|
| City | Fish Camp, CA, USA |
| Period | 10/6/97 → 10/9/97 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering