Preparation and characterization of dielectric (Y-doped BaTiO3) and resistive (TaN) films for distributed rc network

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RC null networks are widely used in communication and instrumentation systems not only for eliminating undesired frequencies and for measuring transient harmonic distortions but also as central components of selective filters and oscillators in feedback arrangements. An important trend in modern integrated electronics is toward decreased size and increased reliability of electronic systems. This paper describes the characteristics of Y-doped BaTiO3 and TaN films for a Au / TaN / Y-doped BaTiO3 / Pt notch filter. The dielectric (Y-doped BaTiO3) and resistive (TaN) films were grown by pulsed laser deposition. Y-doped BaTiO3 film at 700C deposition temperature has a dielectric constant of 1300 and loss of 0.03 at 1kHz. TaN films at 300C have a sheet resistance of 670 at room temperature and temperature coefficient of resistance (TCR) of -922ppm/C. A notch frequency of 2.8MHz and depth of -7.6.7dB from the resulting uniformly distributed RC notch filters were measured at a notch resistance (RN) of 34. The experimental optimum notch parameters of = R/ RN = 19.7 and xn = /= 33.0 were obtained.

Original languageEnglish (US)
Pages (from-to)83-93
Number of pages11
JournalIntegrated Ferroelectrics
Issue number1-4
StatePublished - 2001
Event13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States
Duration: Mar 11 2001Mar 14 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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