Preparation and characterization of indium based complex perovskites-Pb(Inl/2Nbl/2)O3 (PIN), Ba(Inl/2Nbl/2)O3 (BIN), and Ba(Inl/2Ta 1/2)O3 (BIT)

F. G. Jones; Clive A. Randall; S. J. Jang; Thomas R. Shrout

doi:10.1080/07315179008201117

Preparation and characterization of indium based complex perovskites-Pb(Inl/2Nbl/2)O3 (PIN), Ba(Inl/2Nbl/2)O3 (BIN), and Ba(Inl/2Ta 1/2)O3 (BIT)

F. G. Jones, Clive A. Randall, S. J. Jang, Thomas R. Shrout

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Abstract

The processing of order-disorder perovskites Ba(Int/oNbi n)O3 (BIN), Ba(Ini/2Taj[/2)O3 (BIT), and the lead analogue Pb(In 1/2Nb1/2)O3 (PIN) was investigated with an emphasis on improving and expanding our knowledge of microwave dielectric materials. Both BIN and BIT were shown to be paraelectric perovskites. The processing and annealing of PIN were related to the perovskite and its transformation to pyrochlore. Dielectric and physical characteristics were examined by X-ray diffraction profiles (XRD), scanning electron microscopy (SEM), and dielectric behavior. Attempts to enhance B-site cation order in PIN by thermal annealing were unsuccessful due to a pyrochlore formation.

Original language	English (US)
Pages (from-to)	55-62
Number of pages	8
Journal	Ferroelectrics Letters Section
Volume	12
Issue number	3
DOIs	https://doi.org/10.1080/07315179008201117
State	Published - Sep 1 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{193bbd1ee1ec43758d3df6ae32318587,

title = "Preparation and characterization of indium based complex perovskites-Pb(Inl/2Nbl/2)O3 (PIN), Ba(Inl/2Nbl/2)O3 (BIN), and Ba(Inl/2Ta 1/2)O3 (BIT)",

abstract = "The processing of order-disorder perovskites Ba(Int/oNbi n)O3 (BIN), Ba(Ini/2Taj[/2)O3 (BIT), and the lead analogue Pb(In 1/2Nb1/2)O3 (PIN) was investigated with an emphasis on improving and expanding our knowledge of microwave dielectric materials. Both BIN and BIT were shown to be paraelectric perovskites. The processing and annealing of PIN were related to the perovskite and its transformation to pyrochlore. Dielectric and physical characteristics were examined by X-ray diffraction profiles (XRD), scanning electron microscopy (SEM), and dielectric behavior. Attempts to enhance B-site cation order in PIN by thermal annealing were unsuccessful due to a pyrochlore formation.",

author = "Jones, {F. G.} and Randall, {Clive A.} and Jang, {S. J.} and Shrout, {Thomas R.}",

year = "1990",

month = sep,

day = "1",

doi = "10.1080/07315179008201117",

language = "English (US)",

volume = "12",

pages = "55--62",

journal = "Ferroelectrics Letters Section",

issn = "0731-5171",

publisher = "Taylor and Francis Ltd.",

number = "3",

}

TY - JOUR

T1 - Preparation and characterization of indium based complex perovskites-Pb(Inl/2Nbl/2)O3 (PIN), Ba(Inl/2Nbl/2)O3 (BIN), and Ba(Inl/2Ta 1/2)O3 (BIT)

AU - Jones, F. G.

AU - Randall, Clive A.

AU - Jang, S. J.

AU - Shrout, Thomas R.

PY - 1990/9/1

Y1 - 1990/9/1

N2 - The processing of order-disorder perovskites Ba(Int/oNbi n)O3 (BIN), Ba(Ini/2Taj[/2)O3 (BIT), and the lead analogue Pb(In 1/2Nb1/2)O3 (PIN) was investigated with an emphasis on improving and expanding our knowledge of microwave dielectric materials. Both BIN and BIT were shown to be paraelectric perovskites. The processing and annealing of PIN were related to the perovskite and its transformation to pyrochlore. Dielectric and physical characteristics were examined by X-ray diffraction profiles (XRD), scanning electron microscopy (SEM), and dielectric behavior. Attempts to enhance B-site cation order in PIN by thermal annealing were unsuccessful due to a pyrochlore formation.

AB - The processing of order-disorder perovskites Ba(Int/oNbi n)O3 (BIN), Ba(Ini/2Taj[/2)O3 (BIT), and the lead analogue Pb(In 1/2Nb1/2)O3 (PIN) was investigated with an emphasis on improving and expanding our knowledge of microwave dielectric materials. Both BIN and BIT were shown to be paraelectric perovskites. The processing and annealing of PIN were related to the perovskite and its transformation to pyrochlore. Dielectric and physical characteristics were examined by X-ray diffraction profiles (XRD), scanning electron microscopy (SEM), and dielectric behavior. Attempts to enhance B-site cation order in PIN by thermal annealing were unsuccessful due to a pyrochlore formation.

UR - http://www.scopus.com/inward/record.url?scp=0343277126&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343277126&partnerID=8YFLogxK

U2 - 10.1080/07315179008201117

DO - 10.1080/07315179008201117

M3 - Article

AN - SCOPUS:0343277126

SN - 0731-5171

VL - 12

SP - 55

EP - 62

JO - Ferroelectrics Letters Section

JF - Ferroelectrics Letters Section

IS - 3

ER -

Preparation and characterization of indium based complex perovskites-Pb(Inl/2Nbl/2)O3 (PIN), Ba(Inl/2Nbl/2)O3 (BIN), and Ba(Inl/2Ta 1/2)O3 (BIT)

Abstract

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