Preparation and structure of PbZrO3 films by krf pulsed laser deposition

Ill Won Kim; Byung Moon Jin; S. Trolier-Mckinstry; J. P. Dougherty

doi:10.1080/00150199708224125

Preparation and structure of PbZrO₃ films by krf pulsed laser deposition

Ill Won Kim, Byung Moon Jin, S. Trolier-Mckinstry, J. P. Dougherty

Research output: Contribution to journal › Article › peer-review

Abstract

PbZrO₃(PZ) thin films crystallization by rapid thermal annealing (RTA) was studied using Raman-scattering spectroscopy, and the results were compared with those of x-ray diffraction(XRD) result. It was found to be strongly affected the kinetics of subsequent amorphous-perovskite crystallization by RTA temperature. The use of such post anneals allowed to make films of reproducible microstructure and texture [ both (221) and (240)] prepared by RTA. The low frequency (<200 cm^-1) Raman peaks for the PZ film disappear and three new Raman peaks occur at the 83 cm^-1, 138 cm^-1, 273 cm^-1 respectively.

Original language	English (US)
Pages (from-to)	27-30
Number of pages	4
Journal	Ferroelectrics
Volume	196
Issue number	1-4
DOIs	https://doi.org/10.1080/00150199708224125
State	Published - 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150199708224125

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@article{2aca4509d0eb4ce7bde2134d393c646f,

title = "Preparation and structure of PbZrO3 films by krf pulsed laser deposition",

abstract = "PbZrO3(PZ) thin films crystallization by rapid thermal annealing (RTA) was studied using Raman-scattering spectroscopy, and the results were compared with those of x-ray diffraction(XRD) result. It was found to be strongly affected the kinetics of subsequent amorphous-perovskite crystallization by RTA temperature. The use of such post anneals allowed to make films of reproducible microstructure and texture [ both (221) and (240)] prepared by RTA. The low frequency (<200 cm-1) Raman peaks for the PZ film disappear and three new Raman peaks occur at the 83 cm-1, 138 cm-1, 273 cm-1 respectively.",

author = "Kim, {Ill Won} and Jin, {Byung Moon} and S. Trolier-Mckinstry and Dougherty, {J. P.}",

year = "1997",

doi = "10.1080/00150199708224125",

language = "English (US)",

volume = "196",

pages = "27--30",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Preparation and structure of PbZrO3 films by krf pulsed laser deposition

AU - Kim, Ill Won

AU - Jin, Byung Moon

AU - Trolier-Mckinstry, S.

AU - Dougherty, J. P.

PY - 1997

Y1 - 1997

N2 - PbZrO3(PZ) thin films crystallization by rapid thermal annealing (RTA) was studied using Raman-scattering spectroscopy, and the results were compared with those of x-ray diffraction(XRD) result. It was found to be strongly affected the kinetics of subsequent amorphous-perovskite crystallization by RTA temperature. The use of such post anneals allowed to make films of reproducible microstructure and texture [ both (221) and (240)] prepared by RTA. The low frequency (<200 cm-1) Raman peaks for the PZ film disappear and three new Raman peaks occur at the 83 cm-1, 138 cm-1, 273 cm-1 respectively.

AB - PbZrO3(PZ) thin films crystallization by rapid thermal annealing (RTA) was studied using Raman-scattering spectroscopy, and the results were compared with those of x-ray diffraction(XRD) result. It was found to be strongly affected the kinetics of subsequent amorphous-perovskite crystallization by RTA temperature. The use of such post anneals allowed to make films of reproducible microstructure and texture [ both (221) and (240)] prepared by RTA. The low frequency (<200 cm-1) Raman peaks for the PZ film disappear and three new Raman peaks occur at the 83 cm-1, 138 cm-1, 273 cm-1 respectively.

UR - http://www.scopus.com/inward/record.url?scp=0030698523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030698523&partnerID=8YFLogxK

U2 - 10.1080/00150199708224125

DO - 10.1080/00150199708224125

M3 - Article

AN - SCOPUS:0030698523

SN - 0015-0193

VL - 196

SP - 27

EP - 30

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

ER -

Preparation and structure of PbZrO₃ films by krf pulsed laser deposition

Abstract

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