Preparation of piezoelectric PZT thin films by MOCVD for MEMS applications

Ing Shin Chen, Dong Joo Kim, Jon-Paul Maria, Jeffery F. Roeder, Angus I. Kingon

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remnant polarization values in the range of 20 approx. 30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30 approx. 60 pm/V were observed on the films deposited between 550 and 600°C.

Original languageEnglish (US)
Pages (from-to)541-547
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 11 2000
EventFerroelectric Thin Films VIII - Boston, MA, USA
Duration: Nov 29 1999Dec 2 1999

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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