Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

David J. Meyer; Joseph R. Flemish; Joan M. Redwing

doi:10.1063/1.2928236

Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

David J. Meyer, Joseph R. Flemish, Joan M. Redwing

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5 Scopus citations

Abstract

This study has examined the effects that various prepassivation plasma surface treatments had on pulsed and dc I-V characteristics of AlGaNGaN high-electron-mobility transistors. Pulsed I-V current recovery data indicates that C2 F6, N H3, O2, and Cl2 plasma treatments can be used in conjunction with plasma-enhanced chemical vapor deposited silicon nitride to significantly reduce rf dispersion. The different prepassivation surface treatments, however, produced little variation in dc I-V parameters such as gate leakage current, interdevice isolation current, and off-state breakdown voltage as compared to untreated passivated samples.

Original language	English (US)
Article number	193505
Journal	Applied Physics Letters
Volume	92
Issue number	19
DOIs	https://doi.org/10.1063/1.2928236
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2928236

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title = "Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors",

abstract = "This study has examined the effects that various prepassivation plasma surface treatments had on pulsed and dc I-V characteristics of AlGaNGaN high-electron-mobility transistors. Pulsed I-V current recovery data indicates that C2 F6, N H3, O2, and Cl2 plasma treatments can be used in conjunction with plasma-enhanced chemical vapor deposited silicon nitride to significantly reduce rf dispersion. The different prepassivation surface treatments, however, produced little variation in dc I-V parameters such as gate leakage current, interdevice isolation current, and off-state breakdown voltage as compared to untreated passivated samples.",

author = "Meyer, {David J.} and Flemish, {Joseph R.} and Redwing, {Joan M.}",

note = "Funding Information: This work was supported in part by the Pennsylvania State University Applied Research Laboratory and by the Air Force Research Laboratory through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0242. The authors also acknowledge the use of facilities at the PSU site of NSF NNIN.",

year = "2008",

doi = "10.1063/1.2928236",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

AU - Meyer, David J.

AU - Flemish, Joseph R.

AU - Redwing, Joan M.

N1 - Funding Information: This work was supported in part by the Pennsylvania State University Applied Research Laboratory and by the Air Force Research Laboratory through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0242. The authors also acknowledge the use of facilities at the PSU site of NSF NNIN.

PY - 2008

Y1 - 2008

N2 - This study has examined the effects that various prepassivation plasma surface treatments had on pulsed and dc I-V characteristics of AlGaNGaN high-electron-mobility transistors. Pulsed I-V current recovery data indicates that C2 F6, N H3, O2, and Cl2 plasma treatments can be used in conjunction with plasma-enhanced chemical vapor deposited silicon nitride to significantly reduce rf dispersion. The different prepassivation surface treatments, however, produced little variation in dc I-V parameters such as gate leakage current, interdevice isolation current, and off-state breakdown voltage as compared to untreated passivated samples.

AB - This study has examined the effects that various prepassivation plasma surface treatments had on pulsed and dc I-V characteristics of AlGaNGaN high-electron-mobility transistors. Pulsed I-V current recovery data indicates that C2 F6, N H3, O2, and Cl2 plasma treatments can be used in conjunction with plasma-enhanced chemical vapor deposited silicon nitride to significantly reduce rf dispersion. The different prepassivation surface treatments, however, produced little variation in dc I-V parameters such as gate leakage current, interdevice isolation current, and off-state breakdown voltage as compared to untreated passivated samples.

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Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

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