Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

Basant Chitara; Kunyan Zhang; Martha Y.Garcia Cervantes; Tej B. Limbu; Bikram Adhikari; Shengxi Huang; Fei Yan

doi:10.1557/s43579-021-00117-w

Probing charge transfer in 2D MoS₂/tellurene type-II p–n heterojunctions

Basant Chitara, Kunyan Zhang, Martha Y.Garcia Cervantes, Tej B. Limbu, Bikram Adhikari, Shengxi Huang, Fei Yan

Electrical Engineering

Research output: Contribution to journal › Comment/debate › peer-review

5 Scopus citations

Abstract

2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS₂, to study its charge transfer for photovoltaic applications. The charge transfer of MoS₂/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS₂/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS₂. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

Original language	English (US)
Pages (from-to)	868-872
Number of pages	5
Journal	MRS Communications
Volume	11
Issue number	6
DOIs	https://doi.org/10.1557/s43579-021-00117-w
State	Published - Dec 2021

All Science Journal Classification (ASJC) codes

General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/s43579-021-00117-w

Cite this

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title = "Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions",

abstract = "2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].",

author = "Basant Chitara and Kunyan Zhang and Cervantes, {Martha Y.Garcia} and Limbu, {Tej B.} and Bikram Adhikari and Shengxi Huang and Fei Yan",

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T1 - Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions

AU - Chitara, Basant

AU - Zhang, Kunyan

AU - Cervantes, Martha Y.Garcia

AU - Limbu, Tej B.

AU - Adhikari, Bikram

AU - Huang, Shengxi

AU - Yan, Fei

PY - 2021/12

Y1 - 2021/12

N2 - 2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

AB - 2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices. Graphical abstract: [Figure not available: see fulltext.].

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