Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Q. M. Ramasse; N. Alem; O. V. Yazyev; A. Zettl; C. T. Pan; R. R. Nair; R. Jalil; R. Zan; U. Bangert; C. R. Seabourne; A. J. Scott; K. S. Novoselov

doi:10.1017/S1431927612009488

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Q. M. Ramasse, N. Alem, O. V. Yazyev, A. Zettl, C. T. Pan, R. R. Nair, R. Jalil, R. Zan, U. Bangert, C. R. Seabourne, A. J. Scott, K. S. Novoselov

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1526-1527
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
Issue number	S2
DOIs	https://doi.org/10.1017/S1431927612009488
State	Published - Jul 2012

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Ramasse, Q. M., Alem, N., Yazyev, O. V., Zettl, A., Pan, C. T., Nair, R. R., Jalil, R., Zan, R., Bangert, U., Seabourne, C. R., Scott, A. J., & Novoselov, K. S. (2012). Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS. Microscopy and Microanalysis, 18(S2), 1526-1527. https://doi.org/10.1017/S1431927612009488

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title = "Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS",

author = "Ramasse, {Q. M.} and N. Alem and Yazyev, {O. V.} and A. Zettl and Pan, {C. T.} and Nair, {R. R.} and R. Jalil and R. Zan and U. Bangert and Seabourne, {C. R.} and Scott, {A. J.} and Novoselov, {K. S.}",

year = "2012",

month = jul,

doi = "10.1017/S1431927612009488",

language = "English (US)",

volume = "18",

pages = "1526--1527",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

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}

Ramasse, QM, Alem, N, Yazyev, OV, Zettl, A, Pan, CT, Nair, RR, Jalil, R, Zan, R, Bangert, U, Seabourne, CR, Scott, AJ & Novoselov, KS 2012, 'Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS', Microscopy and Microanalysis, vol. 18, no. S2, pp. 1526-1527. https://doi.org/10.1017/S1431927612009488

TY - JOUR

T1 - Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

AU - Ramasse, Q. M.

AU - Alem, N.

AU - Yazyev, O. V.

AU - Zettl, A.

AU - Pan, C. T.

AU - Nair, R. R.

AU - Jalil, R.

AU - Zan, R.

AU - Bangert, U.

AU - Seabourne, C. R.

AU - Scott, A. J.

AU - Novoselov, K. S.

PY - 2012/7

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U2 - 10.1017/S1431927612009488

DO - 10.1017/S1431927612009488

M3 - Article

AN - SCOPUS:85009585694

SN - 1431-9276

VL - 18

SP - 1526

EP - 1527

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - S2

ER -

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

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