Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Q. M. Ramasse, N. Alem, O. V. Yazyev, A. Zettl, C. T. Pan, R. R. Nair, R. Jalil, R. Zan, U. Bangert, C. R. Seabourne, A. J. Scott, K. S. Novoselov

Research output: Contribution to journal › Article › peer-review

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