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Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

  • Lucile C. Teague
  • , Oana D. Jurchescu
  • , Curt A. Richter
  • , Sankar Subramanian
  • , John E. Anthony
  • , Thomas N. Jackson
  • , David J. Gundlach
  • , James G. Kushmerick

Research output: Contribution to journalArticlepeer-review

Abstract

We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

Original languageEnglish (US)
Article number203305
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
StatePublished - May 17 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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