Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films

Wenhe Wang; Wei Tang; Jiaqing Zhao; Bei Bao; Hui Xing; Xiaojun Guo; Shun Wang; Ying Liu

doi:10.1063/1.5001986

Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films

Wenhe Wang, Wei Tang, Jiaqing Zhao, Bei Bao, Hui Xing, Xiaojun Guo, Shun Wang, Ying Liu

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm²V^-1s^-1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.

Original language	English (US)
Article number	125314
Journal	AIP Advances
Volume	7
Issue number	12
DOIs	https://doi.org/10.1063/1.5001986
State	Published - Dec 1 2017

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.5001986

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abstract = "Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V-1s-1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.",

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AU - Wang, Wenhe

AU - Tang, Wei

AU - Zhao, Jiaqing

AU - Bao, Bei

AU - Xing, Hui

AU - Guo, Xiaojun

AU - Wang, Shun

AU - Liu, Ying

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V-1s-1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.

AB - Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V-1s-1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.

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Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films

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