@inbook{3db89d63d4014778a6da30a8c786517f,
title = "Proceedings of the 1995 E-MRS Spring Meeting",
abstract = "Thermal anneal activation of defects resulting from atomic hydrogen treatment of Si wafers in an electron cyclotron resonance (ECR) plasma system have been studied. Following short-term (4-12 min), low-temperature hydrogenation, n- and p-Si wafers were annealed over the temperature range 300-750°C for 20 min. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.",
author = "Nam, {C. W.} and A. Tanabe and S. Ashok",
year = "1996",
month = jan,
language = "English (US)",
series = "Materials science & engineering. B, Solid-state materials for advanced technology",
publisher = "Elsevier Science S.A.",
number = "1-3",
pages = "[d]294p",
booktitle = "Symposium N",
edition = "1-3",
}